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1

Theoretical Considerations on Bragg-case Diffraction of X-rays at a Small Glancing Angle

Kishino, Seigô, Kohra, Kazutake

Journal:

Japanese Journal of Applied Physics

Year:

1971

File:

PDF, 784 KB

1971

2

Half-width and peak-intensity measurement of a rocking curve obtained from silicon on sapphire using soft x-ray beams

Kishino, Seigo^, Iida, Shinya, Aoki, Shigeru, Mizutani, Tatsumi, Watanabe, Tetsuo

Journal:

Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 440 KB

english, 1977

3

Improved Techniques of Lattice Parameter Measurements Using two X-Ray Beams

Journal:

Advances in X-ray Analysis

Year:

1972

File:

PDF, 491 KB

1972

4

Electroluminescence observation and x-ray topographic study of a nitrogen-doped GaP-LED

Funakoshi, Kiyohiko, Kishino, Seigo^

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 409 KB

english, 1976

5

Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors

Niu, Hirohiko, Shiraishi, Takehisa, Yoshida, Haruhiko, Matsuda, Tetsuro, Kishino, Seigô

Journal:

Japanese Journal of Applied Physics

Year:

1995

File:

PDF, 718 KB

1995

6

Lattice Parameters of Ion-Implanted Silicon Crystals

Mitsuishi, Tomokuni, Kishino, Seigô, Noda, Atsuko

Journal:

Japanese Journal of Applied Physics

Year:

1971

File:

PDF, 186 KB

1971

7

Anomalous Enhancement of Transmitted Intensity in Asymmetric Diffraction of X-Rays from a Single Crystal

Kishino, Seigo, Noda, Atsuko, Kohra, Kazutake

Journal:

Journal of the Physical Society of Japan

Year:

1972

File:

PDF, 1.16 MB

1972

8

4376657 Method of making fault-free surface zone in semiconductor devices by step-wise heat treating

Kazutoshi Nagasawa, Seigo Kishino, Yoshiaki Matsushita, Masaru Kanamori

Journal:

Microelectronics Reliability

Year:

1983

Language:

english

File:

PDF, 139 KB

english, 1983

9

A high-speed X-ray topography camera for use with synchrotron radiation at the photon factory

Shigeo Suzuki, Masami Ando, Kazunobu Hayakawa, Osamu Nittono, Hiroo Hashizume, Seigo Kishino, Kazutake Kohra

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1984

Language:

english

File:

PDF, 911 KB

english, 1984

10

Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

Kishino, Seigo^, Matsushita, Yoshiaki, Kanamori, Masaru

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 480 KB

english, 1979

11

Shapiro-like steps from a weakly coupled junction prepared with high-Tc superconducting materials

Kishino, Seigo^, Kuroda, Hideaki, Shibutani, Tuneo, Niu, Hirohiko

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 490 KB

english, 1994

12

Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique

Kishino, Seigô

Journal:

Japanese Journal of Applied Physics

Year:

1971

File:

PDF, 187 KB

1971

13

Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior

Kishino, Seigô, Matsushita, Yoshiaki, Kanamori, Masaru, Iizuka, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1982

File:

PDF, 2.32 MB

1982

14

Suppression of oxidation-stacking-fault generation by preannealing in N2 atmosphere

Kishino, Seigo^, Isomae, Seiichi, Tamura, Masao, Maki, Michiyoshi

Journal:

Applied Physics Letters

Year:

1978

Language:

english

File:

PDF, 406 KB

english, 1978

15

The Enhancement of Anomalously Transmitted X-Ray Intensity by Asymmetric Diffraction and Its Application to Si Wafer Evaluation

Kishino, Seigô, Yoshihiro, Naotsugu, Iizuka, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1978

Language:

english

File:

PDF, 253 KB

english, 1978

16

Screw-type dislocations due to lattice mismatch in GaP: N/GaP epitaxy

Kishino, Seigô, Ogirima, Masahiko

Journal:

Philosophical Magazine

Year:

1975

Language:

english

File:

PDF, 1.48 MB

english, 1975

17

ChemInform Abstract: BLDG. EINES SCHRAFFIERTEN MUSTERS IN AUF GAAS-SUBSTRAT EPITAKTISCH AUFGEWACHSENEM GAAS(1-X)P(X)

KISHINO, SEIGO, OGIRIMA, MASAHIKO, KURATA, KAZUHIRO

Journal:

Chemischer Informationsdienst

Year:

1972

File:

PDF, 115 KB

1972

18

MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Detectable Face of 30 mm Long

Matsubara, Yoshihiro, Kodai, Toshiya, Yoshida, Haruhiko, Niu, Hirohiko, Matsuda, Tetsuro, Kishino, Seigô

Journal:

Japanese Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

19

Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers

Kishino, Seigô, Nagasawa, Kazutoshi, Iizuka, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1980

Language:

english

File:

PDF, 4.30 MB

english, 1980

20

Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth

Seigo Kishino, Masahiko Ogirima, Takashi Kajimura, Kazuhiro Kurata

Journal:

Journal of Crystal Growth

Year:

1974

Language:

english

File:

PDF, 909 KB

english, 1974

21

X-ray channeling technique using anomalous transmission and its application to si micro-defects induced by heat treatment

Journal:

Journal of Electronic Materials

Year:

1978

Language:

english

File:

PDF, 408 KB

english, 1978

22

Chemical Composition of A l 2O 3 / I n P Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation

Matsuda, Tetsuro, Yoshida, Haruhiko, Nara, Naoki, Niu, Hirohiko, Kishino, Seigô

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 248 KB

english, 1994

23

Photoluminescence Analysis of Annealed Silicon Crystals

Tajima, Michio, Kishino, Seigo, Iizuka, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 285 KB

1979

24

Anomalous Transmission in Bragg-Case Diffraction of X-Rays

Kishino, Seigô

Journal:

Journal of the Physical Society of Japan

Year:

1971

File:

PDF, 792 KB

1971

25

X-ray topographic observation of dark-line defects in GaAs-Ga1−xAlxAs double-heterostructure wafers

Kishino, Seigo^, Nakashima, Hisao, Chinone, Naoki, Ito, Ryoichi

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 535 KB

english, 1976

26

Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers

Tajima, Michio, Yoshida, Haruhiko, Ibuka, Shigeo, Kishino, Seigo

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 92 KB

english, 2003

27

Photoliminescence Analysis of `New Donors' in Silicon

Tajima, Michio, Kanamori, Akihiro, Kishino, Seigô, Iizuka, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 483 KB

1980

28

Characterization of deep levels in Si-MOS structure using ICTS measurement

Susumu Iwamoto, Haruhiko Yoshida, Seigo Kishino

Journal:

Electrical Engineering in Japan

Year:

2000

Language:

english

File:

PDF, 179 KB

english, 2000

29

Photoluminescence analysis of annealed silicon crystals

Tajima, Michio, Kishino, Seigo^, Kanamori, Masaru, Iizuka, Takashi

Journal:

Journal of Applied Physics

Year:

1980

Language:

english

File:

PDF, 879 KB

english, 1980

30

Heat-treatment behavior of microdefects and residual impurities in CZ silicon crystals

Kishino, Seigo^, Kanamori, Masaru, Yoshihiro, Naotsugu, Tajima, Michio, Iizuka, Takashi

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 513 KB

english, 1979

31

Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Yoshida, Haruhiko, Sasakura, Hiroshi, Yabuuchi, Tomoyuki, Takami, Toshinori, Uchihashi, Takayuki, Kishino, Seigo

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 268 KB

english, 2001

32

Growth behavior of oxidation stacking faults and microdefects in silicon during high-temperature annealing

Kishino, Seigo^, Isomae, Seiichi, Tamura, Masao, Maki, Michiyoshi

Journal:

Journal of Applied Physics

Year:

1978

Language:

english

File:

PDF, 570 KB

english, 1978

33

Local electrical characterization of SOI wafers by scanning probe microscopy

Yoshimori Ishizuka, Takayuki Uchihashi, Haruhiko Yoshida, Seigo Kishino

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 182 KB

english, 2002

34

Isothermal capacitance transient spectroscopy of electron and hole emissions from interface states in metal-oxide-semiconductor transistors

Yoshida, Haruhiko, Niu, Hirohiko, Kishino, Seigo^

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 768 KB

english, 1993

35

X-ray topographic study of dark-spot defects in GaAs-Ga1−xAlxAs double-heterostructure wafers

Kishino, Seigo^, Nakashima, Hisao, Ito, Ryoichi, Nakada, Osamu

Journal:

Applied Physics Letters

Year:

1975

Language:

english

File:

PDF, 429 KB

english, 1975

36

Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs

Kishino, Seigo^, Iida, Shinya

Journal:

Journal of The Electrochemical Society

Year:

1972

Language:

english

File:

PDF, 1.98 MB

english, 1972

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